Microwave induced in-situ active ion etching of growing InP nanocrystals.

FABRICATION AND CHARACTERISATION of InGaAs/InGaAsP/InP LONG WAVELENGTH SEMICONDUCTOR LASERS

This paper presents the fabrication and characterisation of wet and reactive ion etched ridge waveguide InGaAs/InGaAsP/InP lasers with an operating wavelength of 1.5μm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparat...

Characteristics of III-V Dry Etching In HBr-Based Discharges

Electron cyclotron resonance (ECR) discharges of HBr/Ar, HBr/H2, or HBr/CH4 were used for dry etching of Ga-based (GaAs, GaSb, and A1GaAs) and In-based (InP, InAs, InSb, InGaAs, and InA1As) III-V semiconductors. The effects of variations in pressure (1-20 mTorr), gas composition, and additional RF-induced bias on the sample were examined. At least -100 V of dc bias is required to initiate etchi...

Investigation of reactive - ion - etch - induced damage of InP / InGaAs multiple quantum wells by photoluminescence

Reactive ion etching of quartz and Pyrex for microelectronic applications

The reactive ion etching of quartz and Pyrex substrates was carried out using CF4 /Ar and CF4 /O2 gas mixtures in a combined radio frequency ~rf!/microwave ~mw! plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture ~CF4 /Ar or CF4 /O2), the relative concentration of CF4 in the gas mixture, the rf power ~and the associated self-in...

Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide

We demonstrate a simple and efficient optical coupler for vertical coupling between optical fibers and InP-based waveguides using a slant-etched mirror. The angle of the etched mirror can be controlled by using an aluminum jig with a beveled surface inserted under the substrate during RIE (reactive ion etching) of InP/InGaAsP. The offchip coupler is fabricated simultaneously with a high-mesa wa...